elektronische bauelemente SMG3402 n-ch enhancement mode power mosfet 4.6 a, 30 v, r ds(on) , 30 m ? 01-december-2008 rev. a page 1 of 4 3402 1 rohs compliant product a suffix of -c specifies halogen & lead-free descriptions & features the SMG3402 uses advanced trench technology to prov ide excellent on-resistance. the device is suitable for use as a load switch or in pwm applications. lower on-resistance package information weight: 0.07800g marking code absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 3 i d @t a =25 4.6 a continuous drain current 3 i d @t a =70 3.7 a pulsed drain current 1,2 i dm 16 a total power dissipation p d @t a =25 1.38 w operating junction and storage temperature range t j , t stg -55 ~ +150 linear derating factor 0.01 w/ thermal data parameter symbol value unit thermal resistance junction-ambient 3 max r j-amb 90 /w 1 gate 2 source drain 3 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2. 25 3 . 0 0 h 0.40 ref. c 1.3 0 1. 7 0 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 sc-59
elektronische bauelemente SMG3402 n-ch enhancement mode power mosfet 4.6 a, 30 v, r ds(on) , 30 m ? 01-december-2008 rev. a page 2 of 4 electrical characteristics (tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 30 - - v v gs = 0, i d = 250 ua gate threshold voltage v gs(th) 1.0 - 2.5 v v ds = v gs , i d = 250 a forward transconductance g fs - 5 - s v ds = 5 v, i d = 4.6 a gate-source leakage current i gss - - 100 na v gs = 20 v drain-source leakage current(tj=25 ) - - 1 ua v ds = 30 v, v gs = 0 drain-source leakage current(tj=55 ) i dss - - 5 ua v ds = 24 v, v gs = 0 - - 30 v gs = 10 v, i d = 4.6 a static drain-source on-resistance r ds(on) - - 42 m v gs = 4.5 v, i d = 4.0 a total gate charge 2 q g - 15.8 - gate-source charge q gs - 2 - gate-drain (miller) charge q gd - 3 - nc i d = 4.6 a v ds = 15 v v gs = 10 v turn-on delay time 2 t d(on) - 4.8 - rise time t r - 3.9 - turn-off delay time t d(off) - 27.7 - fall time t f - 5.5 - ns v ds = 15 v i d = 1 a v gs = 10 v r g = 6 r l = 15 input capacitance c iss - 782 - output capacitance c oss - 135 - reverse transfer capacitance c rss - 93 - pf v gs = 0 v v ds = 15 v f = 1.0 mhz source-drain diode parameter symbol min. typ. max. unit test conditions forward on voltage 2 v sd - - 1.2 v i s = 1.25 a, v gs =0v notes: 1. pulse width limited by max. junction temp erature. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1in 2 copper pad of fr4 board; 270 c/w when mounted on min. copper pad.
elektronische bauelemente SMG3402 n-ch enhancement mode power mosfet 4.6 a, 30 v, r ds(on) , 30 m ? 01-december-2008 rev. a page 3 of 4 characteristic curve
elektronische bauelemente SMG3402 n-ch enhancement mode power mosfet 4.6 a, 30 v, r ds(on) , 30 m ? 01-december-2008 rev. a page 4 of 4 characteristic curves (contd)
|
